J. W. Bender, M. E. Salmon, P. E. Russell
North Carolina State University, Analytical Instrumentation Facility, Raleigh, North Carolina, USA
Full-text (for Scanning subscribers)
Summary: Cross-sectional scanning tunneling microscopy (STM) was combined with atomic force microscopy (AFM) over the same area to characterize a cross-sectioned GaN light emitting diode. Because GaN is typically grown on a non-native substrate and also forms a wurtzite crystal structure, a cryogenic cleaving technique was developed to generate smooth surfaces. The depletion region surrounding the p-n junction was clearly identified using STM. Furthermore, by imaging under multiple sample biases, distinctions between the n-doped and p-doped GaN could be made.
Key words: Key words: gallium nitride, scanning tunneling microscopy, atomic force microscopy, cross-section, light emitting diode
PACS: 61.16.Ch, 07.79.-v, 07.79.Lh, 07.79.Cz
This project was supported by the Research and Development Unit, DID, of Universidad Austral de Chile, Project S-98-03.